| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the characteristics of a semiconductor integrated circuit device having a MISFET with a dual gate electrode structure. <P>SOLUTION: A polycrystalline film 6 is deposited on the gate insulating film 5 of a substrate 1, a p-type impurity region 16p is formed on an n-type well 4, an n-type impurity region 16n is formed on a p-type well 3, nitrogen is implanted into the boundary a between these regions for the formation of a nitrogen-implanted region 26, and a linear pattern is formed by etching, with the pattern stretching from above the p-type active region Acp to above the n-type active region Acn through above an element isolator 2. A heat treatment is performed for the diffusion of impurities in the upper parts of the patterns (16n, 16p) for the formation an n-type gate electrode and a p-type gate electrode. The design suppresses the diffusion of impurities out of the n-type impurity region 16n and the p-type impurity region 16p into the active regions on the opposite side, which controls the reduction of impurity concentration and suppresses gate electrode depletion and threshold potential fluctuation. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
