| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a single crystal Si thin film device can be formed easily on an insulating substrate without using an adhesive, and which contains a single crystal Si thin film wherein surface defect is eliminated and film thickness is small and uniform, and a method for manufacturing the semiconductor device. <P>SOLUTION: A hydrogen ion injection part 151 wherein adjustment is so performed that the peak position of distribution of hydrogen ions is in a BOX layer 152 (buried oxide layer), and a single crystal Si thin film transistor 130 are formed on an SOI substrate 150, and bonding to an insulating substrate 110 is performed. Cleavage and separation are performed with the hydrogen ion injection part 151 by thermal treatment, and the unnecessary part of the SOI substrate 150 is eliminated. A BOX layer 152a left on the single crystal Si thin film transistor 130 is eliminated by etching. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
