发明名称 |
MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for Copper barrier applications |
摘要 |
A method of forming a tungsten nitride thin film in an integrated circuit includes preparing a silicon substrate on a silicon wafer and placing the silicon wafer in a heatable chuck in a CVD vacuum chamber; placing a known quantity of a tungsten source in a variable-temperature bubbler to provide a gaseous tungsten source; setting the variable-temperature bubbler to a predetermined temperature; passing a carrier gas through the variable-temperature bubbler and carrying the gaseous tungsten source with the carrier gas into the CVD vacuum chamber; introducing a nitrogen-containing reactant gas into the CVD vacuum chamber; reacting the gaseous tungsten source and the nitrogen-containing reactant gas above the surface of the silicon wafer in a deposition process to deposit a WxNy thin film on the surface of the silicon wafer; and completing the integrated circuit containing the WxNy thin film.
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申请公布号 |
US2004203234(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20030410029 |
申请日期 |
2003.04.09 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
PAN WEI;BARROWCLIFF ROBERT;EVANS DAVID R;HSU SHENG TENG |
分类号 |
C23C16/34;C23C16/455;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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