发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device includes a process for forming a photoresist pattern. In the disclosed process, residual photoresist polymers are removed using a photoresist polymer remover composition that includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.
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申请公布号 |
US2004202967(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20030723485 |
申请日期 |
2003.11.26 |
申请人 |
PARK SEONG HWAN;LEE CHANG HWAN |
发明人 |
PARK SEONG HWAN;LEE CHANG HWAN |
分类号 |
G03F7/42;H01L21/027;H01L21/304;(IPC1-7):G03F7/42 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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