| 摘要 |
A method of forming a dielectric layer on a substrate. A first in situ steam generation (ISSG) procedure is performed to form a first oxide layer on the substrate. A silicon nitride layer is formed on the first oxide layer. A second ISSG procedure is performed to form a second oxide layer on the silicon nitride layer. Moreover, during the second ISSG procedure, the silicon nitride layer can be transformed into a nitrogen-containing second oxide layer.
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