SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF TO FORM STABLE AND UNIFORM SILICIDE LAYER

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to form a stable and uniform silicide layer by depositing a metal film using sputtering with high power. CONSTITUTION: A gate(16) is formed on a semiconductor substrate(10) of an active region. A spacer(18) is formed at both sidewalls of the gate. A source/drain region(19) is formed in the active region. A metal film is deposited on the resultant structure by sputtering. A passivation metal film is formed on the metal film. By first annealing the resultant structure, a silicide layer(22,20) is formed on the gate and the source/drain region. The passivation metal film and the non-reaction metal film are removed. The silicide layer is stabilized by second annealing.