| 摘要 |
PURPOSE: A circuit for generating a reference voltage of a semiconductor memory device is provided to generate a desired internal reference voltage although the threshold voltage of the transistor for dividing the internal reference voltage is 0.5V. CONSTITUTION: A circuit for generating a reference voltage of a semiconductor memory device includes a reference voltage generator(10), a first reference voltage division circuit(12), an operational amplifier(DA0), a second reference voltage controller(14) and a second reference voltage division unit(16). The reference voltage generator(10) generates and outputs a previously set first reference voltage(VREF). The first reference voltage division circuit(12) outputs a first division voltage(Va1) by dividing the first reference voltage(VREF) generated at the reference voltage generator(10). The operational amplifier(DA0) amplifies and outputs the difference value between the first and the second division voltages(Va1,Va2). The second reference voltage controller(14) controls the level of the second reference voltage(VREFA) in response to the differential amplification value of the operational amplifier(DA0). And, the second reference voltage division unit(16) feedback outputs the second division voltage(Va2) to the differential amplifier by dividing the second reference voltage(VREFA) controlled from the second reference voltage controller(14).
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