SILICON WAFER HEAT TREATMENT JIG, AND SILICON WAFER HEAT TREATMENT METHOD

摘要

In a silicon wafer heat treatment jig and method, three support arms spaced apart from each other and projecting from a support frame toward a center point have support projections on their upper sides. When a silicon wafer is placed on the support projections and heat-treated in a treating furnace, all the support projections are positioned on the same circumference of the wafer and within a region of 85-99.5% of the radius of the silicon wafer as seen radially outward, individual support arms forming an angle of 120°with respect to the center point. As a result, the transformation free depth starting from a pin site is made greater than in the device-forming region, and the slip-free region with no slip on such wafer surface is made widest.