Method for processing a substrate for surface treatment, e.g. rinsing, etching, polishing and cleaning, of silicon wafers comprises homogeneously selecting the speed of the process medium along the surface of the substrate
摘要
<p>Method for processing a substrate comprises homogeneously selecting the speed of the process medium along the surface of the substrate. An independent claim is also included for an immersion bath arrangement for processing a substrate.</p>
