| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a multilayer wiring substrate with high reliability wherein bumps are joined there between firmly by adding heat and pressure bonding at a low temperature under the melting point of the bumps of the wiring substrate without being affected by an oxide layer on a bump surface, and voids are not generated in a thermosetting resin layer between the wiring substrates, in a method for manufacturing the multilayer wiring substrate wherein the wiring substrates are joined by bumps. <P>SOLUTION: A bump electrode wherein an uppermost layer is an alloy layer whose main component is Sn and its lower layer is an alloy layer whose main component is In is formed on the surface of a first wiring substrate. The pad electrode of an alloy layer whose main component is Au on the surface of a second wiring substrate. A thermosetting resin layer is formed on a surface where the pad electrode is formed. The bump electrode and the pad electrode are mutually brought into contact with each other and stuck by pressure. Bonding is performed at a temperature which is at least an eutectic reaction temperature with the Sn-In alloy layer and lower than a melting point of the alloy layer whose main component is Au. A thermosetting resin layer is cured at a temperature lower than a melting point of an Sn-In-Au alloy layer formed in a bonding part of the bump electrode and the pad electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
