NOVEL SACRIFICIAL LAYERS FOR USE IN FABRICATIONS OF MICROELECTROMECHANICAL DEVICES
摘要
A sacrificial layer and a method for applying said sacrificial layer in fabricating microelectromechanical devices are disclosed herein. The sacrificial layer comprises an early transition metal. Specifically, the sacrificial layer comprises an early transition metal element, an early transition metal alloy or an early transition metal silicide.
申请公布号
WO2004087561(A2)
申请公布日期
2004.10.14
申请号
WO2004US09222
申请日期
2004.03.24
申请人
REFLECTIVITY, INC.;PATEL, SATYADEV, R.;DOAN, JONATHAN