SEMICONDUCTOR DEVICE AND METHOD FOR FORMING METAL INTERCONNECTION TO PREVENT BLISTER

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent blister by densifying a barrier metal film in a contact hole or a via hole. CONSTITUTION: An interlayer dielectric is formed on a substrate with a lower metal line. A via hole is formed to expose the lower metal line by selectively etching the interlayer dielectric. A barrier metal film including Ti and TiN is formed at inner walls of the via hole, wherein the thickness of Ti is 180Å and below and the thickness of TiN is 90-100Å. The barrier metal film is treated by plasma. A tungsten film is filled in the via hole.