发明名称 TEST METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of testing a semiconductor device which is capable of testing the electrical properties of the semiconductor device with high accuracy before an assembly process is carried out. SOLUTION: The method of testing the semiconductor device 20 comprises processes of positioning a semiconductor wafer where the semiconductor devices 20 have been formed on the surface of a test jig 1, separating the semiconductor wafer into a plurality of semiconductor chips 28 on the surface of the test jig 1 by cutting off the semiconductor wafer, and testing the electrical properties of the semiconductor device 20 formed on each of the semiconductor chips 28 while the semiconductor chips 28 are positioned on the surface of the testing jig 1. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004288761(A) 申请公布日期 2004.10.14
申请号 JP20030076920 申请日期 2003.03.20
申请人 RENESAS TECHNOLOGY CORP 发明人 NISHIBASHI RYOJI;KOBAYASHI KUNIO
分类号 H01L21/66;G01R1/04;G01R31/28;(IPC1-7):H01L21/66 主分类号 H01L21/66
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