| 摘要 |
PROBLEM TO BE SOLVED: To provide a method, where in a semiconductor substrate, there is formed a ultra-shallow junction whose dopant concentration distribution is narrowed through control of its junction depth, by restricting the channelling of dopants in the ion implantation process to a minimum and by controlling the diffusion of dopant in the following heat annealing treatment process. SOLUTION: The method is to form the ultra-shallow junction in the substrate through the following processes for doping the semiconductor substrate: Antimony ions are implanted in the surface region of the semiconductor substrate by first implantation energy; fluorine ions are implanted in the surface region by second implantation energy; boron difluoride ions are implanted in the surface region by third implantation energy which is lower than the first and second implantation energies; and the boron dopant is activated by a high-speed heat annealing treatment. COPYRIGHT: (C)2005,JPO&NCIPI
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