发明名称 LASER IRRADIATION DEVICE, LASER IRRADIATION METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for making the whole surface of irradiation traces a more uniform crystalline state, by making a crystal inferior region formed in both ends of a large grain size region as small as possible, by suppressing the ununiformity in the crystalline state due to the diffraction fringe, and by increasing grain size in the whole surface of laser irradiation traces. SOLUTION: This device comprises a first laser oscillator which outputs a wavelength below visible light, a means for processing a first laser beam emitted from the first laser oscillator into a long beam in an irradiation surface, and a means for cutting off the both ends in the major axis direction of the long beam at the front side of the irradiation surface. The device further comprises a second laser oscillator which outputs a fundamental wave, a means for irradiating a second laser beam emitted from the second laser oscillator simultaneously with the first laser beam in the range where the first laser beam is irradiated in the irradiation surface, and a means for relatively moving the irradiation surface to the first laser beam and the second laser beam. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004289140(A) 申请公布日期 2004.10.14
申请号 JP20040058378 申请日期 2004.03.03
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MORIWAKA TOMOAKI;TANAKA KOICHIRO
分类号 H01L21/20;H01L21/268;H01S3/00;(IPC1-7):H01L21/268 主分类号 H01L21/20
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