发明名称 |
METHOD AND APPARATUS FOR FORMING PZT CRYSTAL FILM BY HYDROTHERMAL SYNTHETIC METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a new method and an apparatus for forming a PZT crystal film in a chemically stable and easily handleable state by a hydrothermal synthetic method. <P>SOLUTION: The method for forming the PZT crystal film by the hydrothermal synthetic method comprises attaching a substrate for forming a piezoelectric crystal to an agitation blade provided in an autoclave and rotating the agitation blade. Thereby, the film can be formed in a state that the contact pressure of a solution for forming the crystal in the autoclave to the surface of the substrate is increased. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2004284887(A) |
申请公布日期 |
2004.10.14 |
申请号 |
JP20030079425 |
申请日期 |
2003.03.24 |
申请人 |
TOIN GAKUEN;TAIATSU GLASS KOGYO KK |
发明人 |
TAKEUCHI SHINICHI;ISHIKAWA MUTSUO;KATSURA NAOKI;SATO TOSHIO;TSUJI KIICHI;KAWASHIMA NORIMICHI;KUROSAWA MINORU |
分类号 |
C30B29/32;C30B7/10;H01L41/187;H01L41/22;H01L41/317;H01L41/39 |
主分类号 |
C30B29/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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