| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve productivity of a semiconductor light emitting element and to improve external quantum efficiency of the semiconductor light emitting element. <P>SOLUTION: When a laser beam is used, a tilting surface 1a of a substrate 1 can be formed readily. Especially, when the tilting surface 1a is made 100 μm or more high, a semiconductor wafer 800 can be divided at a desired position even while keeping the substrate about 200 to 300 μm thick. According to such a constitution, the tilting surface 1a can be ensured wider and at the same time, the wafer 800 can be divided into each light emitting element 100 at a desired position more readily and accurately or surely than by a conventional one. That is, higher external quantum efficiency and higher productivity can be acquired at once than by a conventional method. Furthermore, the substrate 1 can be formed to a convex lens shape by chamfering at least a part of ridges L1, L2 by blast treatment or the like. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
