发明名称 PROCESS FOR FABRICATING FERROELECTRIC CAPACITOR, PROCESS FOR FABRICATING FERROELECTRIC MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a process for fabricating a ferroelectric capacitor having good characteristics. SOLUTION: The process for fabricating a ferroelectric capacitor consisting of a first electrode 20, a ferroelectric film 30, and a second electrode 40 comprises a step for performing heat treatment after the second electrode 40 is formed at least on the ferroelectric film 30, and a step for performing polarization of the ferroelectric film 30 by applying a specified voltage at least between the first electrode 20 and the second electrode 40. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004288943(A) 申请公布日期 2004.10.14
申请号 JP20030080146 申请日期 2003.03.24
申请人 SEIKO EPSON CORP 发明人 HASEGAWA KAZUMASA;NATORI EIJI
分类号 H01L27/105;H01L21/8246;(IPC1-7):H01L27/105 主分类号 H01L27/105
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