| 摘要 |
PROBLEM TO BE SOLVED: To provide a simple manufacturing method of an excellent CaAlAs-based semiconductor laser device, in which Zn diffusion arrives at an active layer sufficiently and which will not cause COD, and to provide the semiconductor laser device. SOLUTION: At least a first conductive Ga<SB>1-x</SB>Al<SB>x</SB>As(0≤x≤1) clad layer 13, a GaAlAs active layer 14, a second conductive Ga<SB>1-y</SB>Al<SB>y</SB>As(0≤y≤1) clad layer 17 doped with Zn by not less than 5E18/cm<SP>3</SP>and a diffusion source layer 41 containing Zn in a concentration higher than that of the second conductive clad layer 17 are laminated on a first conductive GaAs substrate 11 in this order and, thereafter, Zn is selectively diffused from the diffusion source layer 41 until the same arrives at the inside of the first conductive clad layer 13 beyond the active layer 14 while passing through the second conductive clad layer 17. COPYRIGHT: (C)2005,JPO&NCIPI
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