| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, when the conventional method of manufacturing visible semiconductor laser is used, undesirable projecting and recessed parts 13a are produced on the surface of a block layer 8 and worsen the flatness of the surface of an upper electrode 10 and produce erroneous chip recognition, by causing level fluctuation in the reflected light to a camera during the course of chip recognition in removing an etching mask 12 by dry etching. SOLUTION: A method of manufacturing visible semiconductor laser 101 includes a step of forming a lower clad layer 3, an active layer 4, and a first upper clad layer 5 on an n-type GaAs substrate 2; a step of forming the etching mask 12 used for forming the first upper clad layer 5 in a mesa-shape; and a step of forming a mesa section 7 by partially etching off the first upper clad layer 5. The method also includes a step of forming the block layer 8 so as to embed the mesa section 7, a step of covering the surface of the block layer 8 with a protective coating film 102 composed of a photoresist film, and a step of removing the etching mask 12 by dry etching. COPYRIGHT: (C)2005,JPO&NCIPI
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