发明名称 |
FLIP-CHIP LIGHT EMITTING DIODE WITH INDIUM-TIN-OXIDE BASED REFLECTING CONTACTS |
摘要 |
A flip chip light emitting diode die (12) includes a light-transmissive substrate (20) and a plurality of semiconductor layers (22) are disposed on the light-transmissive substrate (20). The semiconductor layers (22) define a light-generating p/n junction. An electrode (30) is formed on the semiconductor layers (22) for flip-chip bonding the diode die (12) to an associated mount (14). The electrode (30) includes an optically transparent layer (42) formed of a substantially optically transparent material adjacent to the semiconductor layers (22) that makes ohmic contact therewith, and a reflective layer (44) adjacent to the optically transparent layer (42) and in electrically conductive communication therewith. |
申请公布号 |
US2004201110(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20030249436 |
申请日期 |
2003.04.09 |
申请人 |
EMCORE CORPORATION |
发明人 |
VENUGOPALAN HARI S.;ELIASHEVICH IVAN |
分类号 |
H01L33/20;H01L33/38;H01L33/62;(IPC1-7):H01L23/48 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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