发明名称 METHOD FOR FORMING FILM
摘要 PROBLEM TO BE SOLVED: To form a microcrystal thin film of proper quality at low temperature by little number of times. SOLUTION: Positive ion and negative ion are supplied onto a workpiece W, and a microcrystal thin film is formed on the workpiece W by utilizing generated energy when these positive ion and negative ion are recombined. Here, a plasma is generated by using high frequency power which is pulse modulated at a predetermined duty ratio. Thus, since a sheath is vanished at pulse OFF time and the negative ion generated by the plasma reaches the surface of the material to be treated, the negative ion can be effectively put to a practical use to form a film. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004289026(A) 申请公布日期 2004.10.14
申请号 JP20030081629 申请日期 2003.03.24
申请人 GOTO TOSHIO;HORI MASARU;TOKYO ELECTRON LTD 发明人 GOTO TOSHIO;HORI MASARU
分类号 C23C16/44;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/44
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