| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a MOSFET type electrostatic protection element indicating a stable off breakdown strength characteristic and a method for manufacturing the semiconductor device. SOLUTION: In the semiconductor device provided with the electrostatic protection element consisting of a gate electrode 17 formed on a semiconductor substrate 1 through a gate insulating film 15 and a MOSFET having a source and a drain formed on the semiconductor substrate 1 through the gate electrode 17, the electrostatic protection element is provided with a thick insulating film 13 having film thickness thicker than the gate insulating film 15 under the drain side end part of the gate electrode 17. The drain is constituted of a high density diffusion layer 11 formed with an interval from the gate electrode 17 and having shallow diffusion depth and a low density diffusion layer 9 formed with an interval from the gate insulating film 15 so as to surround the high density drain diffusion layer 11 and having deep diffusion depth. The gate electrode side end part of the low concentration drain diffusion layer 9 is formed under the thick insulating film 13. COPYRIGHT: (C)2005,JPO&NCIPI
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