| 摘要 |
PROBLEM TO BE SOLVED: To form via-holes, each having a uniform depth, on a silicon by a reactive ion etching method, and to prevent the disappearance of a specific part of a protective film covering a silicon board in an etching process. SOLUTION: A board bearing block 8 made of a conductive material, on which the silicon board 1 to be treated is placed, is arranged inside a chamber 2. The board bearing block is rotated 1-2 times per minute by a torque of a rotary drive unit 10 with a built-in motor in the chamber 2, so that the silicon board 1 comes in contact uniformly with an etching gas. The rotation of the silicon board prevents a formation of a part where the concentration of the etching gas/deposition gas is high on the silicon board, thus enables the formation of the via-holes having the uniform depth on the silicon board. COPYRIGHT: (C)2005,JPO&NCIPI
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