| 摘要 |
PROBLEM TO BE SOLVED: To ensure high flatness in an atomic level on the surface of a TiO<SB>2</SB>rutile single crystal substrate. SOLUTION: The TiO<SB>2</SB>rutile single crystal substrate selected from surface orientation (110), (100), (001), (111) and (101) is cleaned with an organic solvent. After cleaning is performed with an acid solvent, calcination is carried out for one hour by using an electric furnace at a heating temperature of about 300-1,100<SP>o</SP>C under atmospheric pressure. Consequently, a structure is obtained which has an atomic step 2 and a terrace 1 of about 0.22-0.46nm in height on the surface of the TiO<SB>2</SB>rutile single crystal substrate of the selected surface orientation. COPYRIGHT: (C)2005,JPO&NCIPI
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