| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical MOS transistor which realizes a small size, high driving capability, high reliability, a low cost and high yield; and to provide a method for manufacturing the same. SOLUTION: In this vertical MOS transistor, a polycrystal silicon gate electrode is embedded into the middle part of a trench, and an intermediate insulating film is embedded on the polycrystal silicon gate electrode. The intermediate insulating film is etched back to form a metal directly in a self-alignment without the intermediary of a contact hole. Since a layout margin of an alignment deviation or the like is not necessary, an area-saving can be provided. Since the metal is completely flattened, it is highly reliable. COPYRIGHT: (C)2005,JPO&NCIPI
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