| 摘要 |
PROBLEM TO BE SOLVED: To improve a crystal growth rate in a GaN crystal growth process utilizing metal Ga vapor and nitrogen plasma. SOLUTION: In a reaction tube (1) being introduced with nitrogen gas from above, metal Ga (12) is placed at a lower part, a substrate (11) for growing GaN crystal is placed above the metal Ga and GaN crystal is grown by causing reaction between nitrogen plasma (13a) produced by applying a microwave (4a) to nitrogen gas (13) introduced into the reaction tube and Ga vapor evaporated from the metal Ga on the substrate. In such a process for growing GaN crystal, GaN crystal is grown while applying high frequency pulse electric fields (21, 22a, 22b) between the nitrogen gas introducing side and the lower side of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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