| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same in which high driving force of each MISFET can be realized while punch-through of boron to a gate insulating film is controlled. SOLUTION: A silicon acid nitride film 13b is formed in a pMISFET forming region Rpt by introducing nitride ion into a silicon oxide film 13a after the silicon oxide film 13a is formed to each MISFET forming region Rnt, Rpt. Next, after a polysilicon film is deposited over the silicon oxide film 13a; silicon acid nitride film 13b, the polysilicon film, silicon oxide film 13a, and silicon acid nitride film 13b are patterned to form a gate insulating film 13x consisting of silicon oxide film to an nMISFET, and to form a gate insulating film 13y consisting of silicon acid nitride film to a pMISFET. COPYRIGHT: (C)2005,JPO&NCIPI
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