Fabrication method for stacked resonator filter e.g. for forming HF-filters, involves joining first and second wafers together by wafer-bonding with carrier substrates on outside

摘要

A method for fabricating a stacked resonator filter involves initially depositing a first electrode layer (E1), a first piezoelectric layer (PS1) and a second electrode layer (E2) in sequence on to a first carrier substrate (TS1) to provide a first wafer (W1). A third electrode layer (E3), and a second piezoelectric layer (PS2) are deposited sequentially on to a second carrier substrate (TS2), to obtain a second wafer (W2). The two wafers (W1,W2) are then joined by wafer-bonding, where the two carrier substrates (TS1,TS2) are arranged outside. An independent claim is included for a stacked resonator filter.