METHOD AND SYSTEM FOR MONITORING RF IMPEDANCE TO DETERMINE THE PARAMETERS OF A WAFER ON AN ELECTROSTATIC CHUCK

摘要

A method and system for monitoring and/or controlling the conditions of a wafer on an electrostatic chuck during plasma processing. The method and system include utilizing backflow gas pressure and DC clamping voltage as control variables to adjust the wafer temperature based upon impedance measurements determined by RIF sensors located in the electrostatic chuck RIF feed line. The method and system further include utilizing the clamping status of the wafer on the electrostatic chuck to monitor impedance during the plasma process.