METHOD FOR REDUCING RESISTANCE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR FABRICATING APPARATUS TO MAKE OVERLAP REGION BETWEEN METAL LINES HAVE OHMIC CHARACTERISTIC

摘要

PURPOSE: A method for reducing the resistance of a semiconductor device is provided to make the overlap region between metal lines have an ohmic characteristic by breaking a high resistor caused by an insulation component of a contamination layer that may be formed in the overlap region. CONSTITUTION: The first metal line is formed on a substrate(S10). One end of the second metal line is overlapped with one end of the first metal line to be electrically connected to the first metal line so that the second metal line is formed. The resistance between the first and second metal lines is reduced by using an insulation breaking unit in at least one part of the overlap region(S30).