| 摘要 |
PURPOSE: A semiconductor temperature detector, a semiconductor memory device for reducing a self refresh current by using the same, and the method of thereof using MOSFET are provided to determine the self-refresh period by comparing various reference voltages generated at the voltage division resistors. CONSTITUTION: A semiconductor temperature detector, a semiconductor memory device for reducing a self refresh current by using the same, and the method of thereof using MOSFET includes a temperature detector(110), a comparison unit(120), a self-refresh period adjustment unit(130) and a cell array unit(140). The temperature detector(110) generates the temperature sensing voltage in response to the currents flowing into two MOSFETs and generates a first and a second division voltages from a plurality of resistors flowing the increased current and the decreased current thereinto. The comparison unit(120) generates a plurality of temperature reference voltages having a different logic states by receiving the first and the second division voltages. The self-refresh period adjustment unit(130) outputs the self refresh signals having a period corresponding to the temperature reference voltages by oscillating the ring oscillator. And, the cell array unit(140) is provided with a plurality of memory cells in the form of array, wherein each of the memory cells performs the refresh in response to the self-refresh signal.
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