摘要 |
A novel bismuth compound having excellent vaporization characteristic and/or thermal stability, a process of producing the same and a process of producing a film in the film formation by the CVD process are disclosed. Bismuth compounds each represented by the following formula 1, 5 and 9, processes of producing the same, and processes of producing a film. <CHEM> <CHEM> <CHEM> <??>In the formulae, R<1> and R<7> each represents a lower alkyl group; R<2>, R<8>, R<12>, and R<13> each represents a lower alkyl group, a lower alkoxy group, or the like; m represents the number of the substituent R<12> in the range of 0-5; n<1>, n<2>, and n<3> respectively represent the number of the substituent R<2>, the number of the substituent R<8>, and the number of the substituent R<13> each in the range of 0-4; and R<3> to R<6>, R<9> to R<11>, R<14>, and R<15> each represents hydrogen, a lower alkyl group, or the like, provided that specific combinations of the substituents are excluded |