| 摘要 |
PURPOSE: A non-volatile semiconductor memory device for reducing the size of a memory cell by improving the program operation method is provided to reduce the channel length by reducing the voltage of bitline with maintaining the voltage between the sense line and the bitline constant. CONSTITUTION: A non-volatile semiconductor memory device for reducing the size of a memory cell by improving the program operation method includes at least one memory cell(100), a first bias circuit(200) and a second bias circuit(300). The memory cell(100) is provided with a storage transistor(110) and a selection transistor(120). The control gate of the storage transistor(110) is connected to the sense line(S/L) and the gate of the selection transistor(120) is connected to the word line(W/L). The first bias circuit(200) supplies a negative high voltage and a first positive high voltage to the sense line(S/L) and the word line(W/L), respectively, during the program operation. And, the second bias circuit(300) supplies a second positive high voltage to the bitline of the selection transistor(120) during the program operation.
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