发明名称 |
Electrostatic discharge protection structures having high holding current for latch-up immunity |
摘要 |
An electrostatic discharge (ESD) protection device having high holding current for latch-up immunity. The ESD protection circuit is formed in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection device includes a silicon controlled rectifier (SCR) coupled between a protected supply line of the IC and ground. A trigger device is coupled from the supply line to a first gate of the SCR, and a first substrate resistor is coupled between the first gate and ground. A first shunt resistor is coupled between the first gate and ground, wherein the shunt resistor has a resistance value lower than the substrate resistor.
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申请公布号 |
US6803633(B2) |
申请公布日期 |
2004.10.12 |
申请号 |
US20020099263 |
申请日期 |
2002.03.15 |
申请人 |
SARNOFF CORPORATION;SARNOFF EUROPE |
发明人 |
MERGENS MARKUS PAUL JOSEF;RUSS CORNELIUS CHRISTIAN;ARMER JOHN;VERHAEGE KOEN GERARD MARIA;JOZWIAK PHILLIP CZESLAW |
分类号 |
H01L29/74;H01L21/822;H01L21/8238;H01L23/62;H01L27/02;H01L27/04;H01L27/06;H01L27/092;H02H9/00;(IPC1-7):H01L23/62 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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