发明名称 Thermally processing a substrate
摘要 A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.
申请公布号 US6803546(B1) 申请公布日期 2004.10.12
申请号 US20000611349 申请日期 2000.07.06
申请人 APPLIED MATERIALS, INC. 发明人 BOAS RYAN C;BALAKRISHNA AJIT;BIERMAN BENJAMIN;HAAS BRIAN L;JENNINGS DEAN;ADERHOLD WOLFGANG;RAMAMURTHY SUNDAR;MAYUR ABHILASH
分类号 H01L21/26;C30B25/10;C30B31/12;H01L21/00;H01L21/31;H01L21/324;(IPC1-7):F27B5/14 主分类号 H01L21/26
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