METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO AVOID CRACK IN SEMICONDUCTOR CHIP

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to avoid a crack in a semiconductor chip by forming an insulation layer of a good low dielectric constant without delamination. CONSTITUTION: A groove with a final completion thickness or more is formed on the first surface of a semiconductor wafer that has a semiconductor device on the first surface. Adhesive tape is attached to the first surface of the wafer with the groove. The second surface of the semiconductor wafer opposite to the first surface of the semiconductor wafer to which the adhesive tape is attached becomes thinner so that the semiconductor wafer is separated from a plurality of semiconductor chips(1) having the semiconductor device. An adhesion layer is formed on the entire surface of the back surface of the separated semiconductor wafer. The adhesion layer is cut and divided in each semiconductor chip. While the semiconductor wafer is absorbed and fixed by using a porous material separated into at least two absorption areas, the adhesive tape is delaminated from the semiconductor wafer.