| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent SAC(Self-Aligned Contact) fail by covering a spacer nitride layer on a gate line. CONSTITUTION: A gate line(130) including a nitride hard mask is formed on a substrate(100). A buffer oxide layer(150) and the first nitride layer(160) are sequentially formed on the resultant structure. An interlayer dielectric(170) is formed to expose the nitride hard mask. The interlayer dielectric between the exposed nitride hard masks is removed, and the second nitride layer is formed on the resultant structure. A planarized oxide layer(190) is formed on the second nitride layer. By etching the planarized oxide layer and the second nitride layer, a spacer nitride layer(180a) is formed on the gate line. Contact holes are formed using the spacer nitride layer as a mask. A plug is formed in the contact hole and a bit line(220) is formed.
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