发明名称 |
SEMICONDUCTOR DEVICE WITH CAPACITOR AND MANUFACTURING METHOD THEREOF TO ENHANCE CAPACITANCE |
摘要 |
PURPOSE: A semiconductor device with a capacitor and a method for manufacturing the same are provided to enhance capacitance while reducing not open contact and to reduce leaning of a storage node. CONSTITUTION: An interlayer dielectric(102) with a contact pad(104) is formed on a semiconductor substrate(100). An etch stop layer and the first sacrificial layer are formed on the contact pad. The first storage node contact hole is formed in the first sacrificial layer. The first storage node(40) of a pad shape is formed in the first storage node contact hole. The second storage node(70) of a cup shape is formed on the first storage node, thereby forming a lower electrode(106) of a capacitor.
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申请公布号 |
KR20040086649(A) |
申请公布日期 |
2004.10.12 |
申请号 |
KR20030020989 |
申请日期 |
2003.04.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, TAE YEONG;LEE, JAE GU;PARK, JE MIN |
分类号 |
H01L21/02;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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