发明名称 |
Method of measuring crystal defects in thin Si/SiGe bilayers |
摘要 |
Described herein is a method for delineating crystalline defects in a thin Si layer over a SiGe alloy layer. The method uses a defect etchant with a high-defect selectivity in Si. The Si is etched downed to a thickness that allows the defect pits to reach the underlying SiGe layer. A second etchant, which can be the same or different from the defect etchant, is then used which attacks the SiGe layer under the pits while leaving Si intact.
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申请公布号 |
US6803240(B1) |
申请公布日期 |
2004.10.12 |
申请号 |
US20030654231 |
申请日期 |
2003.09.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;FOGEL KEITH E.;SADANA DEVENDRA K. |
分类号 |
H01L21/66;G01N21/84;G01N21/95;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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