发明名称 |
Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system |
摘要 |
A heating system, a method for heating a deposition reactor or an oxidation reactor, and a reactor utilizing the heating system are particularly suited for low-pressure chemical vapor deposition or oxidation. A heating system is particularly useful for heating a reactor in which a plurality of wafers is held perpendicularly to the reactant gas flowing direction that is parallel to the longitudinal axis of the reactor, to enable a deposition or oxidation reaction. The heating system is adapted to change the reactor temperature during the process. In addition, a method heats a reactor to enable a reaction. Preferably, each of a plurality of reactor zones, into which the reactor is divided in a direction parallel to the reactant gas flowing direction, is heated at a different temperature profile indicating the temperature of this specific zone versus time. Thereby, the in-plane uniformity of deposited or oxidized layers can be largely improved.
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申请公布号 |
US6802712(B2) |
申请公布日期 |
2004.10.12 |
申请号 |
US20030685062 |
申请日期 |
2003.10.14 |
申请人 |
INFINEON TECHNOLOGIES SC300 GMBH & CO. KG;AVIZA TECHNOLOGY, INC. |
发明人 |
BERNHARDT HENRY;SEIDEMANN THOMAS;STADTMUELLER MICHAEL |
分类号 |
C23C16/46;C30B25/10;C30B31/18;C30B33/00;H01L21/00;H01L21/31;(IPC1-7):F27D1/10 |
主分类号 |
C23C16/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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