| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent collapse of a guard ring and bit fails by using a barrier layer instead of the guard ring. CONSTITUTION: A semiconductor substrate(100) with a lower structure(110) defined with a cell region(A) and a peripheral region(B) including a plurality of storage nodes(120) is prepared. An etch stop layer(130) and the first interlayer dielectric(140) are sequentially formed on the resultant structure. The etch stop layer of the cell region is exposed by selectively etching the first interlayer dielectric. A barrier layer(150) and the second interlayer dielectric are formed on the resultant structure. The barrier layer of the peripheral region is exposed by planarizing the second interlayer dielectric. A contact hole of the cell region is formed to expose the storage node. A lower electrode(180a) is formed in the contact hole. The second interlayer dielectric of the cell region is removed. Then, a dielectric film(190) and an upper electrode(200) are sequentially formed.
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