SEMICONDUCTOR COMPONENT WITH JUNCTION TERMINATION WITH HIGH BLOCKING EFFECTIVENESS

摘要

An n- or p-doped semiconductor region (2) accommodates the depletion zone (21) of an active area (3) of the semiconductor component with a vertical extension dependent upon an applied blocking voltage. The junction termination (4) for the active area (3) is constituted with a semiconductor doped oppositely to the semiconductor region (2), and is arranged immediately adjacently around the active area (3) on or in a surface (20) of the semiconductor region (2). The lateral extension (W) of the junction termination (4) is greater than the maximum vertical extension (T) of the depletion zone (21), and the semiconductor region (2) as well as the junction termination (4) are constituted with a semiconductor with a band gap of at least 2 eV.