| 摘要 |
PURPOSE: A positive photoresist composition responsive to electric beam, X ray or EUV(Extreme Ultra Violet) is provided to improve performances in very fine patterning of a semiconductor element, particularly to improve PED(Post Exposure Delay) characteristics in vacuum condition and line edge roughness when using electric beam, and to improve sensitivity and contrast. CONSTITUTION: The positive photoresist composition responsive to electric beam, X ray or EUV comprises: (a) a polymer of which solubility in an alkali developing solution is increased by acid treatment, wherein the polymer comprises repeating units represented by formulas I, II and III; (b) an acid-generating compound by activation light or irradiation; and (c) a solvent. In the formulas of I to III, L1, L2, L3 and L4 may be same or different, and represent hydrogen, linear, branched or cyclic alkyl or aralkyl groups, respectively; Z is linear, branched or cyclic alkyl or aralkyl groups; W is same as defined for Z; Z and L1, or W and L4 may be linked together to form a 5- or 6-membered ring, provided that Z and W are not the same.
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