METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE WITH IMPROVED CAPACITANCE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance capacitance by forming a lower electrode with a spacer shape in a contact hole and to simplify the process by patterning simultaneously the lower electrode and an upper electrode. CONSTITUTION: An insulating layer(30) is formed on a semiconductor substrate(21) with a transistor. A contact hole is formed to expose a junction region of the transistor by selectively etching the insulating layer. A lower electrode(34a) with a spacer shape is formed at inner walls of the contact hole. A dielectric film(35) is formed on the lower electrode. Then, an upper electrode(36a) is formed by filling a conductive layer in the contact hole.