SEMICONDUCTOR MEMORY DEVICE FOR WRITING AND READING DATA IN STABLE MANNER WITH REDUCED CURRENT DISSIPATION

摘要

PURPOSE: A semiconductor memory device for writing and reading data in a stable manner with reduced current dissipation is provided to reduce a static noise margin by changing substrate potential of transistors of memory cells in a selected column in a data writing process. CONSTITUTION: A semiconductor memory device includes a plurality of memory cells and a substrate potential changing circuit. The memory cells(MC00-MC11) are arranged in rows and columns. Each of the memory cells includes a latch circuit formed with insulated gate type field effect transistors of first and second conductivity types having back gates. The substrate potential changing circuit(10) is used for changing the back gate potential of the insulated gate type field effect transistor of the first conductivity type of a selected memory cell on writing/reading data according to an address signal and an operation mode designating signal.