| 摘要 |
PURPOSE: A method for forming a dual gate insulating layer of a semiconductor device is provided to prevent loss of dose due to wet etching by directly forming a polysilicon layer on a gate oxide layer. CONSTITUTION: The first gate oxide layer and the first polysilicon layer(120) are sequentially formed on a semiconductor substrate(100). By selectively etching the first polysilicon layer, the first gate oxide layer is exposed. The second gate oxide layer is formed on the resultant structure. The second polysilicon layer(140) is formed on the second gate oxide layer. By planarizing the second polysilicon layer, the second gate oxide layer on the first polysilicon layer is removed. By patterning the resultant structure, a dual gate insulating layer(110) is formed.
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