| 摘要 |
A method for implanting ions into a surface of a semiconductor structure covered by a layer of insulating material, for example into a trench wall covered by a layer of oxide. A beam of ions is directed at a glancing angle to the layer of insulating material such that a substantial proportion of ions which are implanted into the semiconductor structure surface are scattered from the beam by the layer of insulating material. It is possible therefore to implant ions into a trench wall without requiring a beam source arranged to deliver a beam at a large angle to the trench wall surface.
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