Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes a semiconductor substrate; a first insulating film formed on the top surface of the semiconductor substrate; a first gate electrode formed on the first insulating film; a second insulating film having a three-layered structure made by sequentially depositing a first kind of insulating layer, a second kind of insulating layer and a first kind of insulating layer on the first gate electrode; a second gate electrode formed on the second insulating film; a first plane including the side surface of the first gate electrode or the side surface of the second gate electrode; and a second plane including the side surface of the second kind of insulating layer, wherein distance between said first plane and said second plane does not exceed 5 nm.