| 摘要 |
A semiconductor device comprises a semiconductor element, a heat sink soldered to one surface of the semiconductor element, and a heat sink soldered to an opposite surface of the semiconductor element. The semiconductor element is provided with a wiring layer. The wiring layer is covered with an insulating protective film. The protective film is an organic film. The thickness of the wiring layer and that of the protective film are assumed to be t1 and t2, respectively. The wiring layer and the protective film are formed so as to establish a relationship of t1<T2. An elastic modulus of the protective film at room temperature is adjusted to 1.0-5.0 GPa and a thermal expansion coefficient of the protective film is adjusted to 35-65x10<-6>/° C. Even under a thermal stress the semiconductor device can diminish a short-circuit defect of the wiring layer.
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